SSM6N36FE,LM(T
Tillverkare
TOSHIBA
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
Trans MOSFET N-CH Si 20V 0.5A 6-Pin ES T/R
Trans MOSFET N-CH Si 20V 0.5A 6-Pin ES T/R
Beskrivning (eng)
Beskrivning (eng)
The SSM6N36FE,LM is a high-performance N-channel MOSFET from Toshiba, designed for efficient switching applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 0.5A, making it suitable for low-voltage power management. The device is housed in a compact 6-pin ES package, ensuring minimal footprint on PCBs. With its low RDS(on) characteristics, it provides excellent thermal performance and energy efficiency, ideal for battery-operated devices and portable electronics.
The SSM6N36FE,LM is a high-performance N-channel MOSFET from Toshiba, designed for efficient switching applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 0.5A, making it suitable for low-voltage power management. The device is housed in a compact 6-pin ES package, ensuring minimal footprint on PCBs. With its low RDS(on) characteristics, it provides excellent thermal performance and energy efficiency, ideal for battery-operated devices and portable electronics.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Gustaf eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K