SSM6N16FE,L3F(T
Tillverkare
TOSHIBA
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
TOSHIBA - SSM6N16FE,L3F(T - Dual MOSFET, N-kanal, 20 V, 100 mA, 3 ohm
TOSHIBA - SSM6N16FE,L3F(T - Dual MOSFET, N-kanal, 20 V, 100 mA, 3 ohm
Beskrivning (eng)
Beskrivning (eng)
The TOSHIBA SSM6N16FE,L3F(T is a Dual N-Channel MOSFET designed for high-speed and analog switching applications. It features a maximum Drain-Source voltage of 20 V, a Drain current of 100 mA, and a low on-state resistance (RDS(on)) of 3.0 Ω at VGS = 4 V. The device is suitable for high-density mounting due to its compact package, making it ideal for various electronic applications.
The TOSHIBA SSM6N16FE,L3F(T is a Dual N-Channel MOSFET designed for high-speed and analog switching applications. It features a maximum Drain-Source voltage of 20 V, a Drain current of 100 mA, and a low on-state resistance (RDS(on)) of 3.0 Ω at VGS = 4 V. The device is suitable for high-density mounting due to its compact package, making it ideal for various electronic applications.
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Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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