SSM6L36FE,LM(T
Tillverkare
TOSHIBA
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
Trans MOSFET N/P-CH Si 20V 0.5A/0.33A 6-Pin ytmonterad T/R
Trans MOSFET N/P-CH Si 20V 0.5A/0.33A 6-Pin ytmonterad T/R
Beskrivning (eng)
Beskrivning (eng)
The SSM6L36FE,LM is a high-performance N/P-Channel MOSFET from Toshiba, designed for efficient switching applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 0.5A for N-channel and 0.33A for P-channel configurations. Packaged in a compact 6-Pin ES form factor, this MOSFET is ideal for space-constrained designs. Its low on-resistance (RDS(on)) ensures minimal power loss, making it suitable for various electronic applications, including power management and signal switching.
The SSM6L36FE,LM is a high-performance N/P-Channel MOSFET from Toshiba, designed for efficient switching applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 0.5A for N-channel and 0.33A for P-channel configurations. Packaged in a compact 6-Pin ES form factor, this MOSFET is ideal for space-constrained designs. Its low on-resistance (RDS(on)) ensures minimal power loss, making it suitable for various electronic applications, including power management and signal switching.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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