SSM6K819R,LF(T
Tillverkare
TOSHIBA
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
TOSHIBA - SSM6K819R,LF(T - Effekt-MOSFET, N-kanal, 100 V, 10 A, 0.0258 ohm, TSOP-F, ytmonterad.
TOSHIBA - SSM6K819R,LF(T - Effekt-MOSFET, N-kanal, 100 V, 10 A, 0.0258 ohm, TSOP-F, ytmonterad.
Beskrivning (eng)
Beskrivning (eng)
The TOSHIBA SSM6K819R,LF(T) is a Power MOSFET featuring an N-channel configuration with a maximum drain-source voltage of 100 V and a continuous drain current rating of 10 A. It exhibits a low on-resistance of RDS(ON) = 25.8 mΩ at VGS = 4.5 V, making it suitable for efficient power management and high-speed switching applications.
The TOSHIBA SSM6K819R,LF(T) is a Power MOSFET featuring an N-channel configuration with a maximum drain-source voltage of 100 V and a continuous drain current rating of 10 A. It exhibits a low on-resistance of RDS(ON) = 25.8 mΩ at VGS = 4.5 V, making it suitable for efficient power management and high-speed switching applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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