SP000870646
Tillverkare
INFINEON
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
MOSFET:er N-Ch 100V 190mA SOT-23-3
MOSFET:er N-Ch 100V 190mA SOT-23-3
Beskrivning (eng)
Beskrivning (eng)
The Infineon BSS123N is an N-channel MOSFET designed for small-signal applications. It features a maximum drain-source voltage of 100V, continuous drain current of 190mA, and a low on-state resistance (RDS(on)) of 6mΩ at VGS=10V. This device is avalanche rated and operates efficiently at a temperature range of -55°C to 150°C. It is suitable for logic-level applications with a gate-source voltage rating of ±20V.
The Infineon BSS123N is an N-channel MOSFET designed for small-signal applications. It features a maximum drain-source voltage of 100V, continuous drain current of 190mA, and a low on-state resistance (RDS(on)) of 6mΩ at VGS=10V. This device is avalanche rated and operates efficiently at a temperature range of -55°C to 150°C. It is suitable for logic-level applications with a gate-source voltage rating of ±20V.
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Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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