SCTWA60N120G2-4
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
SILICON CARBIDE POWER MOSFET 120
SILICON CARBIDE POWER MOSFET 120
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 1200 V 60A (Tc) 388W (Tc) Genomgående hål TO-247-4
N-Kanal 1200 V 60A (Tc) 388W (Tc) Genomgående hål TO-247-4
Beskrivning (eng)
Beskrivning (eng)
The SCTWA60N120G2-4 is a silicon carbide N-Channel Power MOSFET with a maximum drain-source voltage of 1200 V and a continuous drain current of 60 A at Tc = 25 °C. It features a low on-resistance of 52 mΩ, a robust intrinsic body diode, and high thermal performance with a junction temperature capability of 200 °C. This device is ideal for high-efficiency applications due to its low gate charge and excellent switching characteristics.
The SCTWA60N120G2-4 is a silicon carbide N-Channel Power MOSFET with a maximum drain-source voltage of 1200 V and a continuous drain current of 60 A at Tc = 25 °C. It features a low on-resistance of 52 mΩ, a robust intrinsic body diode, and high thermal performance with a junction temperature capability of 200 °C. This device is ideal for high-efficiency applications due to its low gate charge and excellent switching characteristics.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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