SCTWA50N120
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
SiC-MOSFET: Silikonkarbid Power MOSFET 1200 V, 65 A, 59 mOhm
SiC-MOSFET: Silikonkarbid Power MOSFET 1200 V, 65 A, 59 mOhm
Beskrivning (eng)
Beskrivning (eng)
The SCTWA50N120 is a Silicon Carbide Power MOSFET featuring a voltage rating of 1200 V, a continuous drain current of 65 A, and a typical on-state resistance (RDS(on)) of 59 mΩ at TJ=150 °C. It is designed for high-efficiency applications, offering excellent thermal performance and fast switching capabilities, making it suitable for demanding power conversion tasks.
The SCTWA50N120 is a Silicon Carbide Power MOSFET featuring a voltage rating of 1200 V, a continuous drain current of 65 A, and a typical on-state resistance (RDS(on)) of 59 mΩ at TJ=150 °C. It is designed for high-efficiency applications, offering excellent thermal performance and fast switching capabilities, making it suitable for demanding power conversion tasks.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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