SCTWA40N120G2V-4
Tillverkare
ST MICROELECTRONICS
Specifikation
Specifikation
DISCRETE
DISCRETE
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 1200 V 36A (Tc) 277W (Tc) Genomgående hål TO-247-4
N-Kanal 1200 V 36A (Tc) 277W (Tc) Genomgående hål TO-247-4
Beskrivning (eng)
Beskrivning (eng)
The SCTWA40N120G2V-4 from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding applications. It features a maximum drain-source voltage of 1200 V and a continuous drain current rating of 36 A at a case temperature (Tc) of 25°C. The device can handle a power dissipation of up to 277 W (Tc), making it suitable for high-efficiency power conversion and switching applications. Packaged in a TO-247-4 through-hole configuration, it offers robust thermal performance and ease of mounting in various electronic designs.
The SCTWA40N120G2V-4 from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding applications. It features a maximum drain-source voltage of 1200 V and a continuous drain current rating of 36 A at a case temperature (Tc) of 25°C. The device can handle a power dissipation of up to 277 W (Tc), making it suitable for high-efficiency power conversion and switching applications. Packaged in a TO-247-4 through-hole configuration, it offers robust thermal performance and ease of mounting in various electronic designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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