SCTWA40N120G2V
Tillverkare
ST MICROELECTRONICS
Specifikation
Specifikation
DISCRETE
DISCRETE
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 1200 V 36A (Tc) 278W (Tc) Genomgående hål TO-247 Långa ledningar
N-Kanal 1200 V 36A (Tc) 278W (Tc) Genomgående hål TO-247 Långa ledningar
Beskrivning (eng)
Beskrivning (eng)
The SCTWA40N120G2V from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding applications. It features a maximum drain-source voltage of 1200 V and a continuous drain current rating of 36 A at a case temperature (Tc) of 25°C. With a power dissipation capability of 278 W (Tc), this device is housed in a TO-247 package with long leads, facilitating easy mounting and thermal management. Its discrete design ensures reliability in high-voltage applications, making it suitable for power conversion and motor control systems.
The SCTWA40N120G2V from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding applications. It features a maximum drain-source voltage of 1200 V and a continuous drain current rating of 36 A at a case temperature (Tc) of 25°C. With a power dissipation capability of 278 W (Tc), this device is housed in a TO-247 package with long leads, facilitating easy mounting and thermal management. Its discrete design ensures reliability in high-voltage applications, making it suitable for power conversion and motor control systems.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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