SCTWA30N120
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
IC POWER MOSFET 1200V HIP247
IC POWER MOSFET 1200V HIP247
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 1200 V 45A (Tc) 270W (Tc) Genomgående hål HiP247™ Långa ledningar
N-Kanal 1200 V 45A (Tc) 270W (Tc) Genomgående hål HiP247™ Långa ledningar
Beskrivning (eng)
Beskrivning (eng)
The SCTWA30N120 is a silicon carbide N-Channel Power MOSFET with a voltage rating of 1200V and a continuous drain current of 45A at Tc = 25 °C. It features a low on-resistance of 90 mΩ (typ. at TJ = 150 °C) and a total power dissipation of 270W. The device is housed in a HiP247™ long leads package, designed for high-efficiency applications with excellent thermal performance and robust switching characteristics.
The SCTWA30N120 is a silicon carbide N-Channel Power MOSFET with a voltage rating of 1200V and a continuous drain current of 45A at Tc = 25 °C. It features a low on-resistance of 90 mΩ (typ. at TJ = 150 °C) and a total power dissipation of 270W. The device is housed in a HiP247™ long leads package, designed for high-efficiency applications with excellent thermal performance and robust switching characteristics.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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