SCTWA20N120
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
IC POWER MOSFET 1200V HIP247
IC POWER MOSFET 1200V HIP247
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 1200 V 20A (Tc) 175W (Tc) Genomgående hål HiP247™ Långa ledningar
N-Kanal 1200 V 20A (Tc) 175W (Tc) Genomgående hål HiP247™ Långa ledningar
Beskrivning (eng)
Beskrivning (eng)
The SCTWA20N120 is a silicon carbide N-channel Power MOSFET with a voltage rating of 1200 V and a continuous drain current of 20 A. It features a low on-resistance of 189 mΩ (typical at TJ=150 °C) and a total dissipation of 175 W. Designed in a HiP247 long leads package, it offers excellent thermal performance and is suitable for high-efficiency applications.
The SCTWA20N120 is a silicon carbide N-channel Power MOSFET with a voltage rating of 1200 V and a continuous drain current of 20 A. It features a low on-resistance of 189 mΩ (typical at TJ=150 °C) and a total dissipation of 175 W. Designed in a HiP247 long leads package, it offers excellent thermal performance and is suitable for high-efficiency applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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