SCTW40N120G2V
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
SILICON CARBIDE POWER MOSFET 120
SILICON CARBIDE POWER MOSFET 120
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 1200 V 36A (Tc) 278W (Tc) Genomgående hål HiP247™
N-Kanal 1200 V 36A (Tc) 278W (Tc) Genomgående hål HiP247™
Beskrivning (eng)
Beskrivning (eng)
The SCTW40N120G2V is a silicon carbide N-Channel Power MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 1200 V, a maximum continuous drain current (ID) of 36 A, and a low on-resistance (RDS(on)) of 100 mΩ. This device operates efficiently at high temperatures (TJ = 200 °C) and is suitable for switching mode power supplies and industrial motor control.
The SCTW40N120G2V is a silicon carbide N-Channel Power MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 1200 V, a maximum continuous drain current (ID) of 36 A, and a low on-resistance (RDS(on)) of 100 mΩ. This device operates efficiently at high temperatures (TJ = 200 °C) and is suitable for switching mode power supplies and industrial motor control.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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