SCTW35N65G2VAG
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
SICFET N-CH 650V 45A HIP247
SICFET N-CH 650V 45A HIP247
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 650 V 45A (Tc) 240W (Tc) Genomgående hål HiP247™
N-Kanal 650 V 45A (Tc) 240W (Tc) Genomgående hål HiP247™
Beskrivning (eng)
Beskrivning (eng)
The SCTW35N65G2VAG is a silicon carbide N-Channel Power MOSFET with a voltage rating of 650V and a continuous drain current of 45A. It features a low on-state resistance (RDS(on)) of 55 mΩ (typ. at TJ = 25 °C) and a total power dissipation of 240W. This device is designed for high-efficiency applications, offering excellent switching performance and thermal stability.
The SCTW35N65G2VAG is a silicon carbide N-Channel Power MOSFET with a voltage rating of 650V and a continuous drain current of 45A. It features a low on-state resistance (RDS(on)) of 55 mΩ (typ. at TJ = 25 °C) and a total power dissipation of 240W. This device is designed for high-efficiency applications, offering excellent switching performance and thermal stability.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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