SCTW100N65G2AG
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
SICFET N-CH 650V 100A HIP247
SICFET N-CH 650V 100A HIP247
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 650 V 100A (Tc) 420W (Tc) Genomgående ytmonterad HiP247™
N-Kanal 650 V 100A (Tc) 420W (Tc) Genomgående ytmonterad HiP247™
Beskrivning (eng)
Beskrivning (eng)
The SCTW100N65G2AG is a silicon carbide N-Channel Power MOSFET rated for 650V and 100A, featuring a maximum RDS(on) of 26 mΩ. It offers excellent switching performance with low gate charge and high thermal stability, making it suitable for demanding applications in electric traction and onboard chargers.
The SCTW100N65G2AG is a silicon carbide N-Channel Power MOSFET rated for 650V and 100A, featuring a maximum RDS(on) of 26 mΩ. It offers excellent switching performance with low gate charge and high thermal stability, making it suitable for demanding applications in electric traction and onboard chargers.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Richard eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K