SCTL35N65G2V
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
TRANS SJT N-CH 650V PWRFLAT HV
TRANS SJT N-CH 650V PWRFLAT HV
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 650 V 40A (Tc) 417W (Tc) ytmonterad PowerFlat™ (8x8) HV
N-Kanal 650 V 40A (Tc) 417W (Tc) ytmonterad PowerFlat™ (8x8) HV
Beskrivning (eng)
Beskrivning (eng)
The SCTL35N65G2V is a silicon carbide N-Channel Power MOSFET with a voltage rating of 650 V and a maximum continuous drain current of 40 A. It features a low on-state resistance (RDS(on)) of 67 mΩ and a total power dissipation of 417 W. This device is designed for high efficiency and excellent switching performance, making it suitable for demanding applications.
The SCTL35N65G2V is a silicon carbide N-Channel Power MOSFET with a voltage rating of 650 V and a maximum continuous drain current of 40 A. It features a low on-state resistance (RDS(on)) of 67 mΩ and a total power dissipation of 417 W. This device is designed for high efficiency and excellent switching performance, making it suitable for demanding applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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