SCTH90N65G2V-7
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
SICFET N-CH 650V 90A H2PAK-7
SICFET N-CH 650V 90A H2PAK-7
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 650 V 90A (Tc) 330W (Tc) ytmonterad H2PAK-7
N-Kanal 650 V 90A (Tc) 330W (Tc) ytmonterad H2PAK-7
Beskrivning (eng)
Beskrivning (eng)
The SCTH90N65G2V-7 is a silicon carbide N-Channel MOSFET rated for 650V and 90A, housed in an H2PAK-7 package. It features a maximum RDS(on) of 24 mΩ, high junction temperature capability (TJ = 175 °C), and low gate charge, making it suitable for high-frequency applications and efficient power conversion.
The SCTH90N65G2V-7 is a silicon carbide N-Channel MOSFET rated for 650V and 90A, housed in an H2PAK-7 package. It features a maximum RDS(on) of 24 mΩ, high junction temperature capability (TJ = 175 °C), and low gate charge, making it suitable for high-frequency applications and efficient power conversion.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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