SCTH70N120G2V-7
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
SILICON CARBIDE POWER MOSFET 120
SILICON CARBIDE POWER MOSFET 120
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 1200 V 90A (Tc) 469W (Tc) Ytmonterad H2PAK-7
N-Kanal 1200 V 90A (Tc) 469W (Tc) Ytmonterad H2PAK-7
Beskrivning (eng)
Beskrivning (eng)
The SCTH70N120G2V-7 is a silicon carbide N-Channel Power MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 1200 V, a continuous drain current (ID) of 90 A, and a low on-state resistance (RDS(on)) of 30 mΩ. This device is optimized for switching mode power supplies and DC-DC converters, providing excellent efficiency and thermal performance.
The SCTH70N120G2V-7 is a silicon carbide N-Channel Power MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 1200 V, a continuous drain current (ID) of 90 A, and a low on-state resistance (RDS(on)) of 30 mΩ. This device is optimized for switching mode power supplies and DC-DC converters, providing excellent efficiency and thermal performance.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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