SCTH60N120G2-7
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
SICFET N-CH 1200V 60A H2PAK-7
SICFET N-CH 1200V 60A H2PAK-7
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 1200 V 60A (Tc) 390W (Tc) ytmonterad H2PAK-7
N-Kanal 1200 V 60A (Tc) 390W (Tc) ytmonterad H2PAK-7
Beskrivning (eng)
Beskrivning (eng)
The SCTH60N120G2-7 is a silicon carbide N-Channel Power MOSFET rated for 1200V and 60A, housed in an H2PAK-7 package. It features a maximum RDS(on) of 52 mΩ, low gate charge, and excellent switching performance, making it suitable for high-efficiency applications. Its robust intrinsic body diode enhances reliability in switching applications.
The SCTH60N120G2-7 is a silicon carbide N-Channel Power MOSFET rated for 1200V and 60A, housed in an H2PAK-7 package. It features a maximum RDS(on) of 52 mΩ, low gate charge, and excellent switching performance, making it suitable for high-efficiency applications. Its robust intrinsic body diode enhances reliability in switching applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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