SCTH40N120G2V7AG
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
SICFET N-CH 650V 33A H2PAK-7
SICFET N-CH 650V 33A H2PAK-7
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 650 V 33A (Tc) 250W (Tc) ytmonterad H2PAK-7
N-Kanal 650 V 33A (Tc) 250W (Tc) ytmonterad H2PAK-7
Beskrivning (eng)
Beskrivning (eng)
The SCTH40N120G2V7AG is a silicon carbide N-Channel Power MOSFET rated for 1200 V and 33 A, housed in an H2PAK-7 package. It features a maximum RDS(on) of 105 mΩ, low gate charge, and robust intrinsic body diode, making it suitable for high-efficiency applications in electric traction and DC/DC converters.
The SCTH40N120G2V7AG is a silicon carbide N-Channel Power MOSFET rated for 1200 V and 33 A, housed in an H2PAK-7 package. It features a maximum RDS(on) of 105 mΩ, low gate charge, and robust intrinsic body diode, making it suitable for high-efficiency applications in electric traction and DC/DC converters.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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