SCTH40N120G2V-7
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
SILICON CARBIDE POWER MOSFET 120
SILICON CARBIDE POWER MOSFET 120
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 1200 V 36A (Tc) 238W (Tc) ytmonterad H2PAK-7
N-Kanal 1200 V 36A (Tc) 238W (Tc) ytmonterad H2PAK-7
Beskrivning (eng)
Beskrivning (eng)
The SCTH40N120G2V-7 is a silicon carbide N-Channel Power MOSFET with a maximum drain-source voltage of 1200 V and a continuous drain current of 36 A at a case temperature of 25 °C. It features a low on-resistance of 100 mΩ, high thermal stability (TJ = 175 °C), and excellent switching performance, making it suitable for high-efficiency applications.
The SCTH40N120G2V-7 is a silicon carbide N-Channel Power MOSFET with a maximum drain-source voltage of 1200 V and a continuous drain current of 36 A at a case temperature of 25 °C. It features a low on-resistance of 100 mΩ, high thermal stability (TJ = 175 °C), and excellent switching performance, making it suitable for high-efficiency applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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