SCTH100N65G2-7AG
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
SICFET N-CH 650V 95A H2PAK-7
SICFET N-CH 650V 95A H2PAK-7
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 650 V 95A (Tc) 360W (Tc) ytmonterad H2PAK-7
N-Kanal 650 V 95A (Tc) 360W (Tc) ytmonterad H2PAK-7
Beskrivning (eng)
Beskrivning (eng)
The SCTH100N65G2-7AG is a silicon carbide N-Channel Power MOSFET with a voltage rating of 650V and a continuous drain current of 95A. It features a maximum on-state resistance (RDS(on)) of 26 mΩ and a total power dissipation of 360W. This device is designed for high-efficiency applications, including electric traction inverters and DC/DC converters for electric vehicles.
The SCTH100N65G2-7AG is a silicon carbide N-Channel Power MOSFET with a voltage rating of 650V and a continuous drain current of 95A. It features a maximum on-state resistance (RDS(on)) of 26 mΩ and a total power dissipation of 360W. This device is designed for high-efficiency applications, including electric traction inverters and DC/DC converters for electric vehicles.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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