SCT30N120
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
SICFET N-CH 1200V 40A HIP247
SICFET N-CH 1200V 40A HIP247
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 1200 V 40A (Tc) 270W (Tc) Genomgående hål HiP247™
N-Kanal 1200 V 40A (Tc) 270W (Tc) Genomgående hål HiP247™
Beskrivning (eng)
Beskrivning (eng)
The SCT30N120 is a Silicon Carbide N-Channel Power MOSFET with a voltage rating of 1200 V and a continuous drain current of 40 A in the HiP247™ package. It features a low on-resistance of 90 mΩ (typ. at TJ = 150 °C) and operates efficiently at high temperatures (TJ = 200 °C). This device is ideal for applications requiring high efficiency and power density.
The SCT30N120 is a Silicon Carbide N-Channel Power MOSFET with a voltage rating of 1200 V and a continuous drain current of 40 A in the HiP247™ package. It features a low on-resistance of 90 mΩ (typ. at TJ = 150 °C) and operates efficiently at high temperatures (TJ = 200 °C). This device is ideal for applications requiring high efficiency and power density.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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