SCT20N120H
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Specifikation
Specifikation
SICFET N-CH 1200V 20A H2PAK-2
SICFET N-CH 1200V 20A H2PAK-2
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 1200 V 20A (Tc) 175W (Tc) ytmonterad H2PAK-2
N-Kanal 1200 V 20A (Tc) 175W (Tc) ytmonterad H2PAK-2
Beskrivning (eng)
Beskrivning (eng)
The SCT20N120H is a silicon carbide N-Channel Power MOSFET with a voltage rating of 1200 V and a continuous drain current of 20 A. It features a low on-resistance of 189 mΩ at 150 °C, high thermal capability (TJ = 175 °C), and a robust intrinsic body diode. This device is optimized for high-efficiency applications, ensuring excellent switching performance and thermal management.
The SCT20N120H is a silicon carbide N-Channel Power MOSFET with a voltage rating of 1200 V and a continuous drain current of 20 A. It features a low on-resistance of 189 mΩ at 150 °C, high thermal capability (TJ = 175 °C), and a robust intrinsic body diode. This device is optimized for high-efficiency applications, ensuring excellent switching performance and thermal management.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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