SCT1000N170
Tillverkare
ST MICROELECTRONICS
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
SiC-MOSFET: Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ 7 A
SiC-MOSFET: Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ 7 A
Beskrivning (eng)
Beskrivning (eng)
The SCT1000N170 is a silicon carbide Power MOSFET featuring a drain-source voltage (VDS) of 1700 V, a typical on-state resistance (RDS(on)) of 1.0 Ω, and a continuous drain current (ID) of 7 A. It offers high-speed switching performance, low capacitances, and a robust intrinsic body diode, making it suitable for high-efficiency applications.
The SCT1000N170 is a silicon carbide Power MOSFET featuring a drain-source voltage (VDS) of 1700 V, a typical on-state resistance (RDS(on)) of 1.0 Ω, and a continuous drain current (ID) of 7 A. It offers high-speed switching performance, low capacitances, and a robust intrinsic body diode, making it suitable for high-efficiency applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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