SBC846BDW1T1G
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS 2NPN 65V 0.1A SC88/SC70-6
TRANS 2NPN 65V 0.1A SC88/SC70-6
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW ytmonterad SC-88/SC70-6/SOT-363
Bipolär (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW ytmonterad SC-88/SC70-6/SOT-363
Beskrivning (eng)
Beskrivning (eng)
The SBC846BDW1T1G is a dual NPN bipolar junction transistor array designed for general-purpose amplifier applications. It features a collector-emitter voltage of 65V, a collector current of 100mA, and a maximum power dissipation of 380mW. This surface-mounted device is housed in the SC-88/SC70-6 package, suitable for low-power applications.
The SBC846BDW1T1G is a dual NPN bipolar junction transistor array designed for general-purpose amplifier applications. It features a collector-emitter voltage of 65V, a collector current of 100mA, and a maximum power dissipation of 380mW. This surface-mounted device is housed in the SC-88/SC70-6 package, suitable for low-power applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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