SBC807-16LT1G
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 45V 0.5A SOT23-3
TRANS PNP 45V 0.5A SOT23-3
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 45 V 500 mA 100 MHz 300 mW ytmonterad SOT-23-3 (TO-236)
Bipolär (BJT) Transistor PNP 45 V 500 mA 100 MHz 300 mW ytmonterad SOT-23-3 (TO-236)
Beskrivning (eng)
Beskrivning (eng)
The SBC807-16LT1G is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It operates at a collector-emitter voltage of -45V and a continuous collector current of -500mA. This surface-mounted device features a maximum power dissipation of 300mW and a current-gain bandwidth product of 100MHz, making it suitable for various electronic circuits.
The SBC807-16LT1G is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It operates at a collector-emitter voltage of -45V and a continuous collector current of -500mA. This surface-mounted device features a maximum power dissipation of 300mW and a current-gain bandwidth product of 100MHz, making it suitable for various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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