RUM002N02T2L
Tillverkare
ROHM
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 20V 200MA VMT3
MOSFET N-CH 20V 200MA VMT3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 20 V 200mA (Ta) 150mW (Ta) ytmonterad VMT3
N-Kanal 20 V 200mA (Ta) 150mW (Ta) ytmonterad VMT3
Beskrivning (eng)
Beskrivning (eng)
The RUM002N02T2L is an N-Channel MOSFET designed for low-voltage applications, featuring a maximum drain-source voltage of 20V and a continuous drain current rating of 200mA at a junction temperature of 25°C. This device is housed in a compact surface mount VMT3 package, allowing for efficient thermal management with a power dissipation capability of 150mW. Its low RDS(on) characteristics make it suitable for various switching applications, ensuring minimal power loss and enhanced performance in electronic circuits.
The RUM002N02T2L is an N-Channel MOSFET designed for low-voltage applications, featuring a maximum drain-source voltage of 20V and a continuous drain current rating of 200mA at a junction temperature of 25°C. This device is housed in a compact surface mount VMT3 package, allowing for efficient thermal management with a power dissipation capability of 150mW. Its low RDS(on) characteristics make it suitable for various switching applications, ensuring minimal power loss and enhanced performance in electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Nicklas eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K