RSR030N06TL
Tillverkare
ROHM
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 3A TSMT3
MOSFET N-CH 60V 3A TSMT3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 3A (Ta) 540mW (Ta) ytmonterad TSMT3
N-Kanal 60 V 3A (Ta) 540mW (Ta) ytmonterad TSMT3
Beskrivning (eng)
Beskrivning (eng)
The RSR030N06TL is an N-Channel MOSFET designed for applications requiring low on-state resistance and high efficiency. It features a maximum Drain-Source voltage (VDSS) of 60V, continuous drain current (ID) of ±3A, and a power dissipation (PD) of 1.0W. The device is housed in a compact TSMT3 surface mount package, with a maximum RDS(on) of 85mΩ. It includes a built-in gate-source protection diode, making it suitable for various electronic applications.
The RSR030N06TL is an N-Channel MOSFET designed for applications requiring low on-state resistance and high efficiency. It features a maximum Drain-Source voltage (VDSS) of 60V, continuous drain current (ID) of ±3A, and a power dissipation (PD) of 1.0W. The device is housed in a compact TSMT3 surface mount package, with a maximum RDS(on) of 85mΩ. It includes a built-in gate-source protection diode, making it suitable for various electronic applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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