RSR025N03HZGTL
Tillverkare
ROHM
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 30V 2.5A TSMT3
MOSFET N-CH 30V 2.5A TSMT3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 30 V 2.5A (Ta) 700mW (Ta) Ytmonterad TSMT3
N-Kanal 30 V 2.5A (Ta) 700mW (Ta) Ytmonterad TSMT3
Beskrivning (eng)
Beskrivning (eng)
The RSR025N03HZG is an N-Channel MOSFET with a maximum Drain-Source voltage (VDSS) of 30V and a continuous drain current (ID) of ±2.5A. It features a low on-state resistance (RDS(on)) of 70mΩ and a power dissipation (PD) of 1.0W. This surface-mounted device is housed in a compact TSMT3 package, making it suitable for space-constrained applications. It includes built-in gate-source protection and is AEC-Q101 qualified, ensuring reliability in automotive applications.
The RSR025N03HZG is an N-Channel MOSFET with a maximum Drain-Source voltage (VDSS) of 30V and a continuous drain current (ID) of ±2.5A. It features a low on-state resistance (RDS(on)) of 70mΩ and a power dissipation (PD) of 1.0W. This surface-mounted device is housed in a compact TSMT3 package, making it suitable for space-constrained applications. It includes built-in gate-source protection and is AEC-Q101 qualified, ensuring reliability in automotive applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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