RSQ025P03HZGTR
Tillverkare
ROHM
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 30V 2.5A TSMT6
MOSFET P-CH 30V 2.5A TSMT6
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 30 V 2,5A (Ta) 950mW (Ta) ytmonterad TSMT6 (SC-95)
P-Kanal 30 V 2,5A (Ta) 950mW (Ta) ytmonterad TSMT6 (SC-95)
Beskrivning (eng)
Beskrivning (eng)
The RSQ025P03HZG is a P-Channel MOSFET with a maximum drain-source voltage (VDSS) of -30V and a continuous drain current (ID) of ±2.5A. It features a low on-state resistance (RDS(on)) of 110mΩ and a power dissipation of 1.25W. This surface-mounted device is housed in a TSMT6 package, making it suitable for compact applications. It includes a built-in gate-source protection diode and is AEC-Q101 qualified, ensuring reliability in automotive and industrial environments.
The RSQ025P03HZG is a P-Channel MOSFET with a maximum drain-source voltage (VDSS) of -30V and a continuous drain current (ID) of ±2.5A. It features a low on-state resistance (RDS(on)) of 110mΩ and a power dissipation of 1.25W. This surface-mounted device is housed in a TSMT6 package, making it suitable for compact applications. It includes a built-in gate-source protection diode and is AEC-Q101 qualified, ensuring reliability in automotive and industrial environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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