RSM002N06T2L
Tillverkare
ROHM
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 250MA VMT3
MOSFET N-CH 60V 250MA VMT3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 250mA (Ta) 150mW (Ta) ytmonterad VMT3
N-Kanal 60 V 250mA (Ta) 150mW (Ta) ytmonterad VMT3
Beskrivning (eng)
Beskrivning (eng)
The RSM002N06T2L is an N-Channel MOSFET designed for small signal applications, featuring a maximum drain-source voltage (VDSS) of 60V and a continuous drain current (ID) of ±250mA. It has a maximum on-state resistance (RDS(on)) of 2.4Ω and a power dissipation of 150mW. This surface-mounted device (VMT3) operates efficiently with low voltage drive capabilities, making it suitable for high-speed switching applications.
The RSM002N06T2L is an N-Channel MOSFET designed for small signal applications, featuring a maximum drain-source voltage (VDSS) of 60V and a continuous drain current (ID) of ±250mA. It has a maximum on-state resistance (RDS(on)) of 2.4Ω and a power dissipation of 150mW. This surface-mounted device (VMT3) operates efficiently with low voltage drive capabilities, making it suitable for high-speed switching applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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