RN4982,LF(CT
Tillverkare
TOSHIBA
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN/PNP PREBIAS 0.2W US6
TRANS NPN/PNP PREBIAS 0.2W US6
Detaljerad specifikation
Detaljerad specifikation
Förhandsbiaserad bipolär transistor (BJT) 1 NPN, 1 PNP - Förhandsbiaserad (Dual) 50V 100mA 250MHz, 200MHz 200mW Ytmonterad US6
Förhandsbiaserad bipolär transistor (BJT) 1 NPN, 1 PNP - Förhandsbiaserad (Dual) 50V 100mA 250MHz, 200MHz 200mW Ytmonterad US6
Beskrivning (eng)
Beskrivning (eng)
The RN4982 is a pre-biased bipolar transistor (BJT) featuring both NPN and PNP configurations. It operates at a maximum collector-emitter voltage of 50V and a collector current of 100mA, with a power dissipation of 200mW. This surface-mounted device is designed for efficient switching and driver circuits, integrating bias resistors to minimize external components.
The RN4982 is a pre-biased bipolar transistor (BJT) featuring both NPN and PNP configurations. It operates at a maximum collector-emitter voltage of 50V and a collector current of 100mA, with a power dissipation of 200mW. This surface-mounted device is designed for efficient switching and driver circuits, integrating bias resistors to minimize external components.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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