RN2904,LF(CT
Tillverkare
TOSHIBA
Datablad
Datablad
Specifikation
Specifikation
TRANS 2PNP PREBIAS 0.2W US6
TRANS 2PNP PREBIAS 0.2W US6
Detaljerad specifikation
Detaljerad specifikation
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW ytmonterad US6
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW ytmonterad US6
Beskrivning (eng)
Beskrivning (eng)
The RN2904,LF is a pre-biased bipolar transistor (BJT) featuring a dual PNP configuration. It operates at a maximum collector-emitter voltage of 50V, collector current of 100mA, and power dissipation of 200mW. This surface-mounted device is suitable for high-frequency applications up to 200MHz, integrating bias resistors to minimize external components.
The RN2904,LF is a pre-biased bipolar transistor (BJT) featuring a dual PNP configuration. It operates at a maximum collector-emitter voltage of 50V, collector current of 100mA, and power dissipation of 200mW. This surface-mounted device is suitable for high-frequency applications up to 200MHz, integrating bias resistors to minimize external components.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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