RN2605(TE85L,F)
Tillverkare
TOSHIBA
Datablad
Datablad
Specifikation
Specifikation
TRANS 2PNP PREBIAS 0.3W SM6
TRANS 2PNP PREBIAS 0.3W SM6
Detaljerad specifikation
Detaljerad specifikation
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW ytmonterad SM6
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW ytmonterad SM6
Beskrivning (eng)
Beskrivning (eng)
The RN2605(TE85L,F) is a pre-biased bipolar transistor (BJT) featuring a dual PNP configuration. It operates at a maximum voltage of 50V and can handle a collector current of up to 100mA, making it suitable for various low-power applications. With a transition frequency of 200MHz and a power dissipation capability of 300mW, this surface-mounted device is designed for efficient performance in compact electronic circuits. The SM6 package ensures ease of integration into modern PCB designs, providing reliable operation in diverse environments.
The RN2605(TE85L,F) is a pre-biased bipolar transistor (BJT) featuring a dual PNP configuration. It operates at a maximum voltage of 50V and can handle a collector current of up to 100mA, making it suitable for various low-power applications. With a transition frequency of 200MHz and a power dissipation capability of 300mW, this surface-mounted device is designed for efficient performance in compact electronic circuits. The SM6 package ensures ease of integration into modern PCB designs, providing reliable operation in diverse environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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