RN1910FE,LF(CT
Tillverkare
TOSHIBA
Datablad
Datablad
Specifikation
Specifikation
TRANS 2NPN PREBIAS 0.1W ES6
TRANS 2NPN PREBIAS 0.1W ES6
Detaljerad specifikation
Detaljerad specifikation
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW ytmonterad ES6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW ytmonterad ES6
Beskrivning (eng)
Beskrivning (eng)
The RN1910FE is a pre-biased bipolar transistor (BJT) featuring dual NPN configuration, rated for 50V and 100mA with a transition frequency of 250MHz. It integrates a bias resistor, reducing external component count and enhancing system compactness. This surface-mounted device is suitable for various applications including switching and driver circuits.
The RN1910FE is a pre-biased bipolar transistor (BJT) featuring dual NPN configuration, rated for 50V and 100mA with a transition frequency of 250MHz. It integrates a bias resistor, reducing external component count and enhancing system compactness. This surface-mounted device is suitable for various applications including switching and driver circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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