RN1906,LF(CT
Tillverkare
TOSHIBA
Datablad
Datablad
Specifikation
Specifikation
TRANS 2NPN PREBIAS 0.2W US6
TRANS 2NPN PREBIAS 0.2W US6
Detaljerad specifikation
Detaljerad specifikation
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW ytmonterad US6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW ytmonterad US6
Beskrivning (eng)
Beskrivning (eng)
The RN1906,LF(CT) from Toshiba Semiconductor and Storage is a pre-biased bipolar transistor (BJT) featuring a dual NPN configuration. It operates at a maximum voltage of 50V and a current rating of 100mA, making it suitable for various applications. With a frequency response of up to 250MHz and a power dissipation capability of 200mW, this surface-mounted device is designed for efficient performance in compact electronic circuits. The US6 package ensures a small footprint, ideal for modern electronic designs requiring space-saving components.
The RN1906,LF(CT) from Toshiba Semiconductor and Storage is a pre-biased bipolar transistor (BJT) featuring a dual NPN configuration. It operates at a maximum voltage of 50V and a current rating of 100mA, making it suitable for various applications. With a frequency response of up to 250MHz and a power dissipation capability of 200mW, this surface-mounted device is designed for efficient performance in compact electronic circuits. The US6 package ensures a small footprint, ideal for modern electronic designs requiring space-saving components.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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