RN1905,LF(CT
Tillverkare
TOSHIBA
Datablad
Datablad
Specifikation
Specifikation
TRANS 2NPN PREBIAS 0.2W US6
TRANS 2NPN PREBIAS 0.2W US6
Detaljerad specifikation
Detaljerad specifikation
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW ytmonterad US6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW ytmonterad US6
Beskrivning (eng)
Beskrivning (eng)
The RN1905,LF(CT) from Toshiba Semiconductor and Storage is a pre-biased bipolar transistor (BJT) featuring a dual NPN configuration. It operates at a maximum voltage of 50V and a current rating of 100mA, making it suitable for various low-power applications. With a transition frequency of 250MHz and a power dissipation capability of 200mW, this surface-mounted device is designed for efficient performance in compact electronic circuits. The US6 package ensures ease of integration into modern PCB designs, providing reliable switching and amplification functions.
The RN1905,LF(CT) from Toshiba Semiconductor and Storage is a pre-biased bipolar transistor (BJT) featuring a dual NPN configuration. It operates at a maximum voltage of 50V and a current rating of 100mA, making it suitable for various low-power applications. With a transition frequency of 250MHz and a power dissipation capability of 200mW, this surface-mounted device is designed for efficient performance in compact electronic circuits. The US6 package ensures ease of integration into modern PCB designs, providing reliable switching and amplification functions.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Bengt eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K