RN1903,LF(CT
Tillverkare
TOSHIBA
Datablad
Datablad
Specifikation
Specifikation
TRANS 2NPN PREBIAS 0.2W US6
TRANS 2NPN PREBIAS 0.2W US6
Detaljerad specifikation
Detaljerad specifikation
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW ytmonterad US6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW ytmonterad US6
Beskrivning (eng)
Beskrivning (eng)
The RN1903,LF(CT) from Toshiba Semiconductor and Storage is a pre-biased bipolar transistor (BJT) featuring a dual NPN configuration. It is designed for surface mount applications, offering a maximum collector-emitter voltage of 50V and a collector current of 100mA. With a transition frequency of 250MHz and a power dissipation capability of 200mW, this component is ideal for high-frequency switching and amplification tasks. The US6 package ensures compact integration into various electronic circuits, making it suitable for space-constrained designs.
The RN1903,LF(CT) from Toshiba Semiconductor and Storage is a pre-biased bipolar transistor (BJT) featuring a dual NPN configuration. It is designed for surface mount applications, offering a maximum collector-emitter voltage of 50V and a collector current of 100mA. With a transition frequency of 250MHz and a power dissipation capability of 200mW, this component is ideal for high-frequency switching and amplification tasks. The US6 package ensures compact integration into various electronic circuits, making it suitable for space-constrained designs.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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