RN1102,LF(CT
Tillverkare
TOSHIBA
Datablad
Datablad
Specifikation
Specifikation
TRANS PREBIAS NPN 50V 0.1A SSM
TRANS PREBIAS NPN 50V 0.1A SSM
Detaljerad specifikation
Detaljerad specifikation
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW ytmonterad SSM
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW ytmonterad SSM
Beskrivning (eng)
Beskrivning (eng)
The RN1102,LF is a pre-biased NPN bipolar transistor designed for surface mount applications. It operates at a maximum collector-emitter voltage of 50 V and a collector current of 100 mA, with a transition frequency of 250 MHz. The integrated bias resistor simplifies circuit design by reducing external component count.
The RN1102,LF is a pre-biased NPN bipolar transistor designed for surface mount applications. It operates at a maximum collector-emitter voltage of 50 V and a collector current of 100 mA, with a transition frequency of 250 MHz. The integrated bias resistor simplifies circuit design by reducing external component count.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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