RGWS60TS65DGC13
Tillverkare
ROHM
Datablad
Datablad
Specifikation
Specifikation
IGBT TRNCH FIELD 650V 51A TO247G
IGBT TRNCH FIELD 650V 51A TO247G
Detaljerad specifikation
Detaljerad specifikation
IGBT Trench Field Stop 650 V 51 A 156 W Genomgående hål TO-247G
IGBT Trench Field Stop 650 V 51 A 156 W Genomgående hål TO-247G
Beskrivning (eng)
Beskrivning (eng)
The RGWS60TS65DGC13 from Rohm Semiconductor is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for efficient power management in various applications. This IGBT features a trench field stop structure, allowing for a maximum voltage rating of 650 V and a continuous current rating of 51 A, with a power dissipation capability of 156 W. Packaged in a TO-247G through-hole configuration, it is suitable for applications requiring high efficiency and thermal performance, making it ideal for motor drives, inverters, and power supplies.
The RGWS60TS65DGC13 from Rohm Semiconductor is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for efficient power management in various applications. This IGBT features a trench field stop structure, allowing for a maximum voltage rating of 650 V and a continuous current rating of 51 A, with a power dissipation capability of 156 W. Packaged in a TO-247G through-hole configuration, it is suitable for applications requiring high efficiency and thermal performance, making it ideal for motor drives, inverters, and power supplies.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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