RGSX5TS65DHRC11
Tillverkare
ROHM
Datablad
Datablad
Specifikation
Specifikation
IGBT TRENCH FLD 650V 114A TO247N
IGBT TRENCH FLD 650V 114A TO247N
Detaljerad specifikation
Detaljerad specifikation
IGBT Trench Field Stop 650 V 114 A 404 W Genomgående hål TO-247N
IGBT Trench Field Stop 650 V 114 A 404 W Genomgående hål TO-247N
Beskrivning (eng)
Beskrivning (eng)
The RGSX5TS65DHRC11 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for efficient power management in various applications. With a voltage rating of 650V and a current rating of 114A, this device is capable of handling significant power levels, with a maximum power dissipation of 404W. The TO-247N package allows for easy mounting and effective thermal management. This IGBT features a trench field stop structure, which enhances switching performance and reduces losses, making it suitable for demanding applications in industrial and automotive sectors.
The RGSX5TS65DHRC11 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for efficient power management in various applications. With a voltage rating of 650V and a current rating of 114A, this device is capable of handling significant power levels, with a maximum power dissipation of 404W. The TO-247N package allows for easy mounting and effective thermal management. This IGBT features a trench field stop structure, which enhances switching performance and reduces losses, making it suitable for demanding applications in industrial and automotive sectors.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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