RFM04U6P(TE12L,F)
Tillverkare
TOSHIBA
Datablad
Datablad
Specifikation
Specifikation
RF MOSFET 6V PW-MINI
RF MOSFET 6V PW-MINI
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 6 V 500 mA 470MHz 13.3dB 4.3W PW-MINI
RF Mosfet 6 V 500 mA 470MHz 13.3dB 4.3W PW-MINI
Beskrivning (eng)
Beskrivning (eng)
The RFM04U6P is a Silicon N Channel MOSFET designed for VHF and UHF-band amplifier applications. It operates at a voltage of 6V, with a maximum drain current of 2A and an output power of 4.3W. The device features a power gain of 13.3dB and a drain efficiency of 70%, making it suitable for high-frequency power amplifiers in telecommunications equipment.
The RFM04U6P is a Silicon N Channel MOSFET designed for VHF and UHF-band amplifier applications. It operates at a voltage of 6V, with a maximum drain current of 2A and an output power of 4.3W. The device features a power gain of 13.3dB and a drain efficiency of 70%, making it suitable for high-frequency power amplifiers in telecommunications equipment.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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