RFD16N06LESM9A
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 60V 16A TO252AA
MOSFET N-CH 60V 16A TO252AA
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 60 V 16A (Tc) 90W (Tc) ytmonterad TO-252AA
N-Kanal 60 V 16A (Tc) 90W (Tc) ytmonterad TO-252AA
Beskrivning (eng)
Beskrivning (eng)
The RFD16N06LESM9A is an N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 60V, continuous drain current of 16A, and a low on-state resistance (RDS(on)) of 0.047Ω. This device is suitable for switching regulators, motor drivers, and relay drivers, operating efficiently with gate bias in the 3V to 5V range, allowing direct interfacing with logic level circuits.
The RFD16N06LESM9A is an N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 60V, continuous drain current of 16A, and a low on-state resistance (RDS(on)) of 0.047Ω. This device is suitable for switching regulators, motor drivers, and relay drivers, operating efficiently with gate bias in the 3V to 5V range, allowing direct interfacing with logic level circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Gustaf eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K