RF3L05200CB4
Tillverkare
ST MICROELECTRONICS
Specifikation
Specifikation
RF MOSFET LDMOS LBB
RF MOSFET LDMOS LBB
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 1GHz 19dB 200W LBB
RF Mosfet 1GHz 19dB 200W LBB
Beskrivning (eng)
Beskrivning (eng)
The RF3L05200CB4 from STMicroelectronics is a high-performance RF MOSFET designed for LDMOS applications. This device operates efficiently at frequencies up to 1 GHz, providing a gain of 19 dB and a maximum output power of 200W. Its robust design ensures reliable performance in demanding RF environments, making it suitable for various applications in telecommunications and broadcasting. The RF MOSFET is optimized for linearity and efficiency, ensuring minimal distortion and high fidelity in signal amplification.
The RF3L05200CB4 from STMicroelectronics is a high-performance RF MOSFET designed for LDMOS applications. This device operates efficiently at frequencies up to 1 GHz, providing a gain of 19 dB and a maximum output power of 200W. Its robust design ensures reliable performance in demanding RF environments, making it suitable for various applications in telecommunications and broadcasting. The RF MOSFET is optimized for linearity and efficiency, ensuring minimal distortion and high fidelity in signal amplification.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Patrick eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K