R6509KND3TL1
Tillverkare
ROHM
Datablad
Datablad
Specifikation
Specifikation
HIGH-SPEED SWITCHING, NCH 650V 9
HIGH-SPEED SWITCHING, NCH 650V 9
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 650 V 9A (Tc) 94W (Tc) Ytmonterad TO-252
N-Kanal 650 V 9A (Tc) 94W (Tc) Ytmonterad TO-252
Beskrivning (eng)
Beskrivning (eng)
The R6509KND3TL1 from Rohm Semiconductor is a high-speed N-Channel MOSFET designed for efficient switching applications. It features a maximum drain-source voltage of 650V and a continuous drain current rating of 9A at a case temperature (Tc) of 25°C. The device has a power dissipation capability of 94W (Tc) and is housed in a compact TO-252 package, suitable for surface mount applications. This MOSFET is ideal for use in power management, motor control, and other high-voltage switching circuits, providing reliable performance in demanding environments.
The R6509KND3TL1 from Rohm Semiconductor is a high-speed N-Channel MOSFET designed for efficient switching applications. It features a maximum drain-source voltage of 650V and a continuous drain current rating of 9A at a case temperature (Tc) of 25°C. The device has a power dissipation capability of 94W (Tc) and is housed in a compact TO-252 package, suitable for surface mount applications. This MOSFET is ideal for use in power management, motor control, and other high-voltage switching circuits, providing reliable performance in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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