R6507END3TL1
Tillverkare
ROHM
Datablad
Datablad
Specifikation
Specifikation
650V 7A TO-252, LOW-NOISE POWER
650V 7A TO-252, LOW-NOISE POWER
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 650 V 7A (Tc) 78W (Tc) ytmonterad TO-252
N-Kanal 650 V 7A (Tc) 78W (Tc) ytmonterad TO-252
Beskrivning (eng)
Beskrivning (eng)
The R6507END3TL1 from Rohm Semiconductor is a high-performance N-Channel MOSFET designed for low-noise power applications. It features a maximum drain-source voltage of 650V and a continuous drain current rating of 7A at a case temperature (Tc) of 25°C. The device is housed in a TO-252 package, allowing for efficient surface mount installation. With a power dissipation capability of 78W (Tc), this MOSFET is ideal for applications requiring high voltage and current handling with minimal noise interference, making it suitable for power management and switching applications in various electronic circuits.
The R6507END3TL1 from Rohm Semiconductor is a high-performance N-Channel MOSFET designed for low-noise power applications. It features a maximum drain-source voltage of 650V and a continuous drain current rating of 7A at a case temperature (Tc) of 25°C. The device is housed in a TO-252 package, allowing for efficient surface mount installation. With a power dissipation capability of 78W (Tc), this MOSFET is ideal for applications requiring high voltage and current handling with minimal noise interference, making it suitable for power management and switching applications in various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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