R1RW0416DSB-2PR#S1
Tillverkare
RENESAS
Datablad
Datablad
Specifikation
Specifikation
IC SRAM 4MBIT PARALLEL 44TSOP II
IC SRAM 4MBIT PARALLEL 44TSOP II
Detaljerad specifikation
Detaljerad specifikation
SRAM - Asynkron minnes-IC 4Mbit parallell 12 ns 44-TSOP II
SRAM - Asynkron minnes-IC 4Mbit parallell 12 ns 44-TSOP II
Beskrivning (eng)
Beskrivning (eng)
The R1RW0416DSB-2PR#S1 is a 4Mbit asynchronous SRAM organized as 256-kword × 16-bit, featuring a 12 ns access time. It operates on a single 5.0V supply and is designed for high-speed applications requiring static memory without clock or timing strobe. The device is TTL compatible and offers low standby currents, making it suitable for cache and buffer memory in various systems.
The R1RW0416DSB-2PR#S1 is a 4Mbit asynchronous SRAM organized as 256-kword × 16-bit, featuring a 12 ns access time. It operates on a single 5.0V supply and is designed for high-speed applications requiring static memory without clock or timing strobe. The device is TTL compatible and offers low standby currents, making it suitable for cache and buffer memory in various systems.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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