R1RW0416DGE-2LR#B1
Tillverkare
RENESAS
Datablad
Datablad
Specifikation
Specifikation
IC SRAM 4MBIT PARALLEL 44SOJ
IC SRAM 4MBIT PARALLEL 44SOJ
Detaljerad specifikation
Detaljerad specifikation
SRAM - Asynkron minnes-IC 4Mbit parallell 12 ns 44-SOJ
SRAM - Asynkron minnes-IC 4Mbit parallell 12 ns 44-SOJ
Beskrivning (eng)
Beskrivning (eng)
The R1RW0416DGE-2LR#B1 is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit. It features a 12 ns access time, operates on a single 3.3V supply, and is designed for applications requiring high-speed and high-density memory, such as cache and buffer memory. The device is available in a 44-pin SOJ package.
The R1RW0416DGE-2LR#B1 is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit. It features a 12 ns access time, operates on a single 3.3V supply, and is designed for applications requiring high-speed and high-density memory, such as cache and buffer memory. The device is available in a 44-pin SOJ package.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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