R1RW0408DGE-2LR#B1
Tillverkare
RENESAS
Specifikation
Specifikation
IC SRAM 4MBIT PARALLEL 36SOJ
IC SRAM 4MBIT PARALLEL 36SOJ
Detaljerad specifikation
Detaljerad specifikation
SRAM Minne IC 4Mbit Parallell 12 ns 36-SOJ
SRAM Minne IC 4Mbit Parallell 12 ns 36-SOJ
Beskrivning (eng)
Beskrivning (eng)
The R1RW0408DGE-2LR#B1 is a 4Mbit SRAM memory IC from Renesas Electronics Corporation, designed for high-speed parallel data processing. It features a 12 ns access time, making it suitable for applications requiring rapid data retrieval and storage. The device is housed in a 36-SOJ package, ensuring a compact footprint for space-constrained designs. This SRAM is ideal for use in embedded systems, telecommunications, and consumer electronics, where reliable and fast memory access is critical for performance.
The R1RW0408DGE-2LR#B1 is a 4Mbit SRAM memory IC from Renesas Electronics Corporation, designed for high-speed parallel data processing. It features a 12 ns access time, making it suitable for applications requiring rapid data retrieval and storage. The device is housed in a 36-SOJ package, ensuring a compact footprint for space-constrained designs. This SRAM is ideal for use in embedded systems, telecommunications, and consumer electronics, where reliable and fast memory access is critical for performance.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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