QSB363ZR
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
SENSOR PHOTO 940NM TOP VIEW 2SMD
SENSOR PHOTO 940NM TOP VIEW 2SMD
Detaljerad specifikation
Detaljerad specifikation
Fototransistorer 940nm Toppvy 2-SMD, Z-Böj
Fototransistorer 940nm Toppvy 2-SMD, Z-Böj
Beskrivning (eng)
Beskrivning (eng)
The QSB363ZR is a silicon phototransistor designed for infrared applications, featuring a peak sensitivity wavelength of 940 nm. It is housed in a T−3/4 (2.50 x 2.00 mm) surface mount package with a medium wide beam angle of 24°. This device operates within a temperature range of -40 to +85 °C and has a power dissipation of 75 mW.
The QSB363ZR is a silicon phototransistor designed for infrared applications, featuring a peak sensitivity wavelength of 940 nm. It is housed in a T−3/4 (2.50 x 2.00 mm) surface mount package with a medium wide beam angle of 24°. This device operates within a temperature range of -40 to +85 °C and has a power dissipation of 75 mW.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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